EPA160A-100P updated 02/15/2005 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised february 2005 ? non-hermetic 100mil metal flange package ? +31.0dbm typical output power ? 11.5db typical power gain at 12ghz ? 0.3 x 1600 micron recessed ?mushroom? gate ? si 3 n 4 passivation ? advanced epitaxia l heterojunction profile provides extra high power efficiency, and high reliability electrical characteristics (t a = 25 o c) symbols parameters/test cond itions min typ max unit 29.0 31.0 p 1db output power at 1db compression f= 12ghz vds=8v, ids=50% idss f= 18ghz 31.0 dbm 9.5 11.5 g 1db gain at 1db compression f= 12ghz vds=8v, ids=50% idss f= 18ghz 8.0 db pae power added efficiency at 1db compression vds=8 v, ids=50% idss f=12ghz 41 % idss saturated drain current vds=3v, vgs=0v 290 480 660 ma gm transconductance vds=3v, vgs=0v 320 500 ms vp pinch-off voltage vds=3v, ids=4.5ma -1.0 -2.5 v bvgd drain breakdown voltage igd=1.6ma -13 -15 v bvgs source breakdown voltage igs=1.6ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 33* o c/w ? overall rth depends on case mounting. absolute maximum ratings for continuous operation at 25 c symbols param eters continuous 1,2 vds drain-source voltage 8v vgs gate-source voltage -3v ids drain current 435ma igsf forward gate current 14ma pin input power @ 3db compression tch channel temperature 150 o c tstg storage temperature -65 to +150 o c pt total power dissipation 3.4w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals. g d
EPA160A-100P updated 02/15/2005 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised february 2005 s-parameters 8v, ? idss freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 1 0.897 -97.83 12.5419 118. 91 0.0319 38.76 0.3246 -79.02 2 0.8556 -138.32 7.7689 90.57 0.0388 17.85 0.3218 -106.48 3 0.8463 -161.09 5.4611 71.1 0.0401 7.73 0.3355 -120.16 4 0.8519 -175.22 4.1206 55.4 0.0391 0.48 0.3633 -132.53 5 0.858 174.42 3.3447 41.57 0.0372 -5.8 0.4116 -142.91 6 0.8508 162.41 2.8519 28.46 0.037 -9.6 0.4552 -150.15 7 0.8567 148.39 2.4307 15.06 0.0344 -12.94 0.4795 -154.4 8 0.8622 140.8 2.1652 1.92 0.0338 -16.52 0.4727 -168.28 9 0.8786 133.15 1.8723 -10.15 0.0333 -18.18 0.5245 178.68 10 0.8892 121.59 1.6132 -21.93 0.0319 -26.17 0.589 174.2 11 0.9018 110.17 1.4439 -34.13 0.0296 -28.49 0.5945 167.81 12 0.9046 103.54 1.3256 -46.47 0.0298 -32.38 0.5934 153.54 13 0.8958 100.63 1.1794 -56.99 0.0319 -33 0.6502 139.78 14 0.8898 91.61 1.0351 -65.22 0.0327 -39.8 0.7159 139.11 15 0.9201 79.78 0.9638 -76.98 0.0344 -44.85 0.6957 135.32 16 0.9115 72.91 0.8571 -88.86 0.0329 -50.1 0.6575 123.22 17 0.921 76.49 0.8482 -96.06 0.0386 -53.04 0.7777 108.19 18 0.9757 69.22 0.8496 -105.81 0.0421 -60.11 0.7903 105.94 19 0.9157 54.5 0.7847 -117.28 0.0415 -68.14 0.774 107.95 20 0.887 46.41 0.7575 -129.46 0.0449 -76.32 0.7413 91.66
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